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MRF859S - NPN SILICON RF POWER TRANSISTOR

Download the MRF859S datasheet PDF. This datasheet also covers the MRF859 variant, as both devices belong to the same npn silicon rf power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF859_Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.
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