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MRF904 - HIGH FREQUENCY TRANSISTOR

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MRF904 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Storage Temperature Symbol v CEO VCBO Vebo 'C PD Tstg Value 15 25 3.0 30 0.2 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Iq = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 5.0 mAdc, Vce = 5.
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