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MRF9060MBR1 - RF Power Field Effect Transistors

Download the MRF9060MBR1 datasheet PDF. This datasheet also covers the MRF9060MR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF9060MR1_Motorola.pdf) that lists specifications for multiple related part numbers.

General Description

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T 5 3052 1648 10 Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060MR1 MRF9060MBR1

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for.

Key Features

  • H. 2.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
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