Datasheet4U Logo Datasheet4U.com

MRF912 - HIGH FREQUENCY TRANSISTOR

📥 Download Datasheet

Datasheet preview – MRF912

📁 Similar Datasheet

  • MRF9120LR3 - RF Power MOSFET (NXP)
  • MRF914 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
  • MRF9002NR2 - RF Power FET (Freescale Semiconductor)
  • MRF9002R2 - RF Power Field Effect Transistor Array (Motorola Inc)
  • MRF901 - NPN SILICON RF TRANSISTOR (ASI)
  • MRF9030LR1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF9030MBR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF9030MBR1 - RF POWER FIELD EFFECT TRANSISTORS (Freescale Semiconductor)
  • MRF9030MR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF9030MR1 - RF POWER FIELD EFFECT TRANSISTORS (Freescale Semiconductor)
Other Datasheets by Motorola
  • MRF9120LR3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF9120R3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF9100 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF9100R3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF9100SR3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF911 - HIGH FREQUENCY TRANSISTOR
  • MRF9130LR3 - 28 V LATERAL N-CHANNEL RF POWER MOSFETs
  • MRF9130LSR3 - 28 V LATERAL N-CHANNEL RF POWER MOSFETs

Full PDF Text Transcription

Click to expand full text
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak Total Device Dissipation C« Tq = 75°C Derate above 75°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol vCEO VCBO v EBO ic PD T stg Value 12 20 3.0 50 500 4.0 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C Symbol R 0JC Max 250 Unit °C/W MRF912 CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS
Published: |