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MRF931 - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak @Total Device Dissipation T/ = 100°C Derate above 100°C Junction Temperature Storage Temperature Symbol VCEO VCBO vEBO ic pd Tj T stq Value 5.0 10 2.0 5.0 50 1.0 + 150 -65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °c °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol R 0JA Max 500 Unit °C/W MRF931 CASE 317-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON ^r ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 0.1 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.01 mAdc, l£ = 0) Emitter-Base Breakdown Voltage E(l = 0.
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