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MRF966 - DUAL GATE GaAs FET

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MAXIMUM RATINGS Rating Symbol MRF966 MRF967 Unit Drain-Source Voltage —Gate-Source Voltage Reverse —Gate-Source Voltage Forward Drain Current vDs V G1S VG1S VG2S id 10 -8.0 -8.0 + 1.0 + 1.0 60 10 -8.0 -8.0 + 1.0 + 1.0 60 Vdc Vdc Vdc mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C Junction Temperature Range Pd 350 3.5 350 mW 3.5 mW/'C Tj -65 to -65 to °C + 125 + 125 Storage Channel Temperature Tstg -65 to -65 to "C Range + 125 + 125 —Handling and Packaging MES devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MES devices should be observed.
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