Full PDF Text Transcription for MSB710-QT1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MSB710-QT1. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSB710–QT1/D PNP General Purpose Amplifier Transistors Surface Mount COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) ...
View more extracted text
ier Transistors Surface Mount COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature DEVICE MARKING Marking Symbol CQX 2 BASE 1 EMITTER Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Symbol PD TJ Tstg CRX MSB710–QT1 MSB710–RT1 The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. MSB710-QT1 MSB710-RT1* *Motorola Preferred Device 2 1 3 CASE 3
More Datasheets from Motorola Semiconductor (now NXP Semiconductors)
MSB710-QT1 Datasheet
