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MTB10N40E TMOS POWER FET

MTB10N40E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB10N40E Features

* esistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics

MTB10N40E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB10N40E
Manufacturer
Motorola
File Size
273.15 KB
Datasheet
MTB10N40E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB10N40E-like datasheet