source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9).

that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOS.

MTB10000

MTB10010U

MTB10062

MTB100A06KRH8

MTB100A10KRH8

MTB100A10KRQ8

MTB100N10RKJ3

MTB110P08KJ3

MTB110P08KN3

MTB110P08KN6

MTB115P10KJ3

MTB11N03BQ8

MTB11N03BV8

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