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MTB1N100E TMOS POWER FET

MTB1N100E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB1N100E Features

* And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typic

MTB1N100E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB1N100E
Manufacturer
Motorola
File Size
256.47 KB
Datasheet
MTB1N100E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB1N100E-like datasheet