MTB1N100E - TMOS POWER FET

Product Overview

Motorola

Part number	MTB1N100E
Manufacturer	Motorola
File Size	256.47 KB
Description	TMOS POWER FET
Datasheet	MTB1N100E Datasheet
Additional preview pages of the MTB1N100E datasheet.

And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. T.

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Published: Sep 13, 2005 |