MTB1N100E Datasheet TMOS POWER FET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1N100E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTB1N100E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	256.47 KB
Description	TMOS POWER FET
Download	MTB1N100E Download (PDF)

And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. T.