MTB36N06V - TMOS POWER FET

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MTB36N06V
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	241.85 KB
Description	TMOS POWER FET
Datasheet	MTB36N06V Datasheet

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.

Key Features

of TMOS V.
On.
resistance Area Product about One.
half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
Faster Switching than E.
FET Predecessors Features Common to TMOS V and TMOS E.
FETs.
Avalanche Energy Specified.
IDSS and VDS(on) Specified at Elevated Temperature.
Static Parameters are the Same for both TMOS V and TMOS E.
FET.
Surface Mount Package Available in 16 mm 13.
inc.

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Brand Logo	Part Number	Description	Manufacturer
	MTB36N06V	Power MOSFET	ON Semiconductor

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