MTB36N06V
Key Features
- half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E
- Surface Mount Package Available in 16 mm 13
- inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number Rating Drain
- Source Voltage Drain
- Gate Voltage (RGS = 1.0 MΩ) Gate
- Source Voltage
