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MTB40N10E Datasheet TMOS POWER FET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB40N10E/D Advance Data Sheet TMOS E-FET.

Key Features

  • nd is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. TJ = 25°C GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.