Datasheet Details
| Part number | MTD15N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 177.19 KB |
| Description | TMOS POWER FET |
| Download | MTD15N06VL Download (PDF) |
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| Part number | MTD15N06VL |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 177.19 KB |
| Description | TMOS POWER FET |
| Download | MTD15N06VL Download (PDF) |
|
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06VL/D ™ TMOS V ™ Designer's Data Sheet MTD15N06VL Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MTD15N06V | Power MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| MTD15N06V | TMOS POWER FET |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N60E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD1P50E | TMOS POWER FET |
| MTD20N03HDL | TMOS POWER FET |