MTD9N10E Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N- Channel Enhancement- Mode Silicon Gate This advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. - Avalanche Energy Specified - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated Temperature - Surface Mount Package Available in 16 mm, 13- inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number - Replaces MTD6N10 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- Repetitive (tp ≤ 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum remended pad size Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 9.0 Apk, L = 1.0 m H, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Ambient, when mounted to minimum remended pad size Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds D ™ Data Sheet Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM ® CASE...