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MTD9N10E

The MTD9N10E is TMOS POWER FET designed by Motorola.

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Motorola

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MTD9N10E TMOS POWER FET by Motorola - Datasheet Preview — Datasheet preview – MTD9N10E

Datasheet Details

Part number	MTD9N10E
Manufacturer	Motorola
File Size	207.99 KB
Description	TMOS POWER FET
Datasheet	MTD9N10E_Motorola.pdf
Additional preview pages of the MTD9N10E datasheet.

Product details

Features

nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C,.

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Published: Nov 8, 2007 |