MTP20N06V
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E–FET Predecessors Features mon to TMOS V and TMOS E–FETS
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET TM D G S CASE 221A–06, Style 5 TO–220AB
