Datasheet4U Logo Datasheet4U.com

MTP30N06VL - TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.

📥 Download Datasheet

Datasheet preview – MTP30N06VL

📁 Similar Datasheet

  • MTP30N06E - TMOS Power FET (Motorola Semiconductor)
  • MTP30N06EL - TMOS Power FET (Motorola Semiconductor)
  • MTP30008 - Three-Phase Bridge Rectifier (nELL)
  • MTP30010 - Three-Phase Bridge Rectifier (nELL)
  • MTP30012 - Three-Phase Bridge Rectifier (nELL)
  • MTP30016 - Three-Phase Bridge Rectifier (nELL)
  • MTP30018 - Three-Phase Bridge Rectifier (nELL)
  • MTP3055 - N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET (ST Microelectronics)
  • MTP3055A - N-Channel MOSFET (STMicroelectronics)
  • MTP3055AFI - N-Channel MOSFET (STMicroelectronics)
Other Datasheets by Motorola
  • MTP30N08M - POWER FIELD EFFECT TRANSISTOR
  • MTP3055 - TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
  • MTP30P06V - TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
  • MTP33N10E - TMOS POWER FET
  • MTP36N06V - TMOS POWER FET
  • MTP3N100 - Power MOSFET
  • MTP3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS
  • MTP3N120E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS

Full PDF Text Transcription

Click to expand full text
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Published: |