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MTP36N06V - TMOS POWER FET

Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP3055 TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
MTP30N06VL TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
MTP30N08M POWER FIELD EFFECT TRANSISTOR
MTP30P06V TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTP33N10E TMOS POWER FET

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP36N06V/D Designer's TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.