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MTP4N50E - TMOS POWER FET

Features

  • 1. Capacitance Variation Figure 12. Gate Charge versus Gate.
  • To.
  • Source Voltage.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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