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MTP4N50E TMOS POWER FET

MTP4N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N *Channel Enhancement *Mode Silicon Gate This a.

MTP4N50E Features

* 1. Capacitance Variation Figure 12. Gate Charge versus Gate
* To
* Source Voltage COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 14 defines the limits of safe operation for commutated source
* drain current versus re
* applied dr

MTP4N50E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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Datasheet Details

Part number
MTP4N50E
Manufacturer
Motorola
File Size
190.66 KB
Datasheet
MTP4N50E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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