MTP75N06HD Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed...