ave finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently,.

that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an.

MTV212A32

MTV212M32

MTV212M64

MTV212M64I

MTV212MN64

MTV230M64

MTV24C08

MTV24LC08

MTV25N50E

MTV-2216WD

MTV003

MTV003N

MTV004