MTV32N20E - TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

Features

es switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 8000 C,.

Motorola Semiconductor (now NXP Semiconductors)

MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM by Motorola - Datasheet Preview — Datasheet preview – MTV32N20E

Datasheet Details

Part number	MTV32N20E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	264.86 KB
Description	TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
Datasheet	MTV32N20E Datasheet
Additional preview pages of the MTV32N20E datasheet.

📁 Similar Datasheet

MTV32N25E - Power Field Effect Transistor (ON Semiconductor)
MTV32-400A - Modulation Diode (SGS-Thomson)
MTV312M64 - 8051 Embedded Monitor Controller Flash Type with ISP (Myson)
MTV312MV64 - 8051 Embedded Monitor Controller (Myson Technology)
MTV-2216WD - LCD TVs Manual (ETC)
MTV003 - Microprocessor Compatible Monitor Controller (Myson)
MTV003N - Microprocessor Compatible Monitor Controller (Myson)
MTV004 - On-Screen Display Shrink Version (Myson)
MTV012A - 8051 Embedded CRT Monitor Controller Mask Version (Myson)
MTV012E - 8051 Embedded CRT Monitor Controller OTP Version (Myson)

Other Datasheets by Motorola

MTV10N100E - TMOS POWER FET 10 AMPERES 1000 VOLTS
MTV16N50E - TMOS POWER FET 16 AMPERES 500 VOLTS
MTV20N50E - TMOS POWER FET
MTV25N50E - TMOS POWER FET

Full PDF Text Transcription

Click to expand full text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.

Published: Jan 8, 2006 |