* rated into an inductive load; however, snubbing reduces switching losses. 7000 6000 C, CAPACITANCE (pF) 5000 4000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Ciss 3000 2000 1000 0 10 5 VGS 0 VDS 5 10 Coss Crss 15 20 25 Crss GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLT
MTW23N25E Datasheet (140.51 KB)
MTW23N25E
Motorola
140.51 KB
Tmos power fet 23 amperes 250 volts.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW23N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
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