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MTW26N15E - TMOS POWER FET

MTW26N15E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.

MTW26N15E Features

* stive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss Ciss 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 Coss

MTW26N15E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche E

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Datasheet Details

Part number
MTW26N15E
Manufacturer
Motorola
File Size
144.80 KB
Datasheet
MTW26N15E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTW26N15E-like datasheet