MTW33N10E Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ MTW33N10E Motorola Preferred Device Power Field Effect Transistor TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode...