MTW6N100E Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand...
