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Motorola Electronic Components Datasheet

MV104 Datasheet

Silicon Tuning Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and tuning, or any
top–of–the–line application requiring back–to–back diode configurations for minimum
signal distortion and detuning.
High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range
37–42 pF @ VR = 3.0 Vdc (MV104)
Dual Diodes – Save Space and Reduce Cost
Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0%
(Max) Over Specified Tuning Range
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
Pin 1
A1
Pin 2 C
Pin 3
A2
1
2
3
CASE 29 – 04, STYLE 15
TO–92 (TO – 226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 32 Vdc
Forward Current
Total Power Dissipation @ TA = 25°C
Derate above 25°C
IF 200 mAdc
PD 280 mW
2.8 mW/°C
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg – 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
32
— Vdc
Reverse Voltage Leakage Current TA = 25°C
(VR = 30 Vdc)
TA = 60°C
IR — — 50 nAdc
— — 500
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
— 280 — ppm/°C
MV104
Device
CT, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Min Max
37 42
Q, Figure of Merit
VR = 3.0 Vdc
f = 100 MHz
Min Typ
100 140
CR, Capacitance Ratio
C3/C30
f = 1.0 MHz
Min Max
2.5 2.8
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–155


Motorola Electronic Components Datasheet

MV104 Datasheet

Silicon Tuning Diode

No Preview Available !

MV104
100
70
TYPICAL CHARACTERISTICS (Each Diode)
550
450
40 350
250 TA = 25°C
20 f = 100 MHz
150
10
0.3 0.5
1.0 2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30
Figure 1. Diode Capacitance (Each Diode)
50
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit versus Voltage
2000
1000 VR = 3.0 Vdc
TA = 25°C
500
200
100
50
20
10
20 30
50 70 100
f, FREQUENCY (MHz)
200 300
Figure 3. Figure of Merit versus Frequency
1.04
1.03 VR = 2.0 V
1.02
4.0 V
1.01
1.00 30 V
0.99
0.98 NORMALIZED to CT
at TA = 25°C
0.97
0.96
–75 –50 –25
0 +25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Diode Capacitance versus Temperature
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
TA = 125°C
TA = 75°C
TA = 25°C
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
25
30
Figure 5. Reverse Current versus Reverse Voltage
5–156
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MV104
Description Silicon Tuning Diode
Maker Motorola
Total Page 2 Pages
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