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MV1403 Datasheet

Silicon Hyper Abrupt Tuning Diodes

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Hyper-Abrupt Tuning Diodes
These devices are designed with high capacitance and a capacitance change of
greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning
over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning
applications in lower RF frequencies.
High Capacitance: 120–250 pF
Large Capacitance Change with Small Bias Change
Guaranteed High Q
Available in Standard Axial Glass Packages
2
Anode
1
Cathode
MV1403
MV1404
MV1405
120 – 250 pF
12 VOLTS
HIGH TUNING RATIO
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR 12 Vdc
Forward Current
IF 250 mAdc
Device Dissipation @ TA = 25°C
Derate above 25°C
PD 400 mW
2.67 mW/°C
1 CASE 51–02
(DO–204AA)
Junction Temperature
TJ +125 °C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 10 Vdc, TA = 25°C)
Series Inductance
(f = 250 MHz, Lead Length 1/16)
V(BR)R
IR
LS
12
— — Vdc
— 0.1 µAdc
5.0 — nH
Case Capacitance
(f = 1.0 MHz, Lead Length 1/16)
CC
— 0.25 —
pF
Device
MV1403
MV1404
MV1405
CT, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Min Nom Max
140 175 210
96 120 144
200 250 300
Q, Figure of Merit
VR = 2.0 Vdc,
f = 1.0 MHz
Min
200
200
200
TR, Tuning Ratio
C1/C10
f = 1.0 MHz
C2/C10
f = 1.0 MHz
Min Min
— 10
— 10
— 10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–157


Motorola Electronic Components Datasheet

MV1403 Datasheet

Silicon Hyper Abrupt Tuning Diodes

No Preview Available !

MV1403 MV1404 MV1405
TYPICAL CHARACTERISTICS
500
300
200
100 MV1405
MV1403
50 MV1404
30
20
TA = 25°C
f = 1 MHz
10
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus
Reverse Voltage
1.08
f = 1.0 MHz
1.06
1.04 VR = 2 Vdc
1.02
1
0.98
0.96
0.94
0.92
–50
–25 0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Diode Capacitance versus
Ambient Temperature
150
1000
VR = 4 Vdc
VR = 6 Vdc
VR = 2 Vdc
100
10
12
5 10 20
f, FREQUENCY (MHz)
50 100
Figure 3. Figure of Merit versus Frequency
5–158
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MV1403
Description Silicon Hyper Abrupt Tuning Diodes
Maker Motorola
Total Page 2 Pages
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