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MOTOROLA The RF Line
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MW4IC915/D
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. • Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power — 3 Watts Avg.
MW4IC915GMBR1 Datasheet
