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P2N5551 - AMPLIFIER TRANSISTORS

This page provides the datasheet information for the P2N5551, a member of the P2N5550 AMPLIFIER TRANSISTORS family.

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Full PDF Text Transcription

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T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbol 2N 2N 5550 5551 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation T/ = 25°C Derate above 25°C Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO ic PD pd Tj, st g 140 160 160 180 6.0 600 625 5.0 1.5 12 -55 to +150 Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rfjjc 83.
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