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Motorola Electronic Components Datasheet

PZT2907AT1 Datasheet

PNP Silicon Epitaxial Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
COLLECTOR
Available in 12 mm tape and reel
2,4
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
BASE 1
PZT2907AT1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
1
2
3
4
3
EMITTER
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625from case
Time in Solder Bath
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
RθJA
TL
Value
– 60
– 60
– 5.0
– 600
1.5
12
– 65 to 150
83.3
260
10
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C/W
°C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
V(BR)CBO – 60
°°
Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO – 60
Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO – 5.0 °°
Vdc
Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0)
ICBO
°° –10
nAdc
Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc)
ICEX
— — – 50 nAdc
Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc)
IBEX
— — – 50 nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–805


Motorola Electronic Components Datasheet

PZT2907AT1 Datasheet

PNP Silicon Epitaxial Transistor

No Preview Available !

PZT2907AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = – 0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = – 500 mAdc, VCE = –10 Vdc)
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
hFE
VCE(sat)
75
100
100
100
50
——
——
——
— 300
——
Vdc
— – 0.4
— –1.6
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
VBE(sat)
Vdc
— –1.3
— – 2.6
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz)
fT
200 —
— MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cc — — 8.0 pF
Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES
Ce — — 30 pF
Turn-On Time
Delay Time
Rise Time
(VCC = – 30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
ton — — 45 ns
td — — 10
tr — — 40
Turn-Off Time
Storage Time
Fall Time
(VCC = – 6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle = 2.0%.
toff — — 100 ns
ts — — 80
tf — — 30
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME 2.0 ns
0
– 16 V
200 ns
– 30 V
1.0 k
50
200
TO OSCILLOSCOPE
RISE TIME 5.0 ns
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME 2.0 ns
0
– 30 V
200 ns
+15 V – 6.0 V
1.0 k
1.0 k
37
TO OSCILLOSCOPE
RISE TIME 5.0 ns
50 1N916
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
2–806
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number PZT2907AT1
Description PNP Silicon Epitaxial Transistor
Maker Motorola
Total Page 3 Pages
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