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TIP120 - DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
TIP121 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
TIP122 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
TIP125 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
TIP126 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
TIP127 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.