900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

TIP36A Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP35A/D
Complementary Silicon
High-Power Transistors
. . . for general–purpose power amplifier and switching applications.
25 A Collector Current
Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain — hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product — hfe= 3.0 min @ IC = 1.0 A,
f = 1.0 MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
TIP35A TIP35B TIP35C
Symbol TIP36A TIP36B TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak (1)
VCEO
VCB
VEB
IC
60 V
60 V
80 V
80 V
5.0
25
40
100 V
100 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
5.0
125
1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load
ESB
90
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction–To–Free–Air Thermal Resistance
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 10%.
1.0
35.7
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
mJ
Unit
_C/W
_C/W
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
NPN
TIP35A
TIP35B*
TIP35C*
PNP
TIP36A
TIP36B*
TIP36C*
*Motorola Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 100 VOLTS
125 WATTS
CASE 340D–02
TO–218AC
1


Motorola Electronic Components Datasheet

TIP36A Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mA, IB = 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–EmitterCutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 V, IB = 0)
(VCE = 60 V, IB = 0)
TIP35A, TIP36A
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–EmitterCutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VEB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 5.0 V, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 A, IB = 1.5 A)
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 5.0 A)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage
(IC = 15 A, VCE = 4.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, VCE = 4.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) PulseTest:PulseWidth=300µs, Duty Cycle 2.0%.
Symbol
Min
VCEO(sus)
ICEO
ICES
IEBO
60
80
100
Max Unit
Vdc
mA
1.0
1.0
0.7 mA
1.0 mA
hFE
VCE(sat)
VBE(on)
hfe
fT
25
15
25
3.0
75
Vdc
1.8
4.0
Vdc
2.0
4.0
——
— MHz
TURN–ON TIME
VCC – 30 V
RL 3.0
+ 2.0 V
0
tr
20 ns
–11.0 V
10
RB
10 TO 100 µS
TO SCOPE
tr 20 ns
DUTY CYCLE 2.0%
TURN–OFF TIME
+ 9.0 V
VCC – 30 V
RL 3.0
0
–11.0 V
10
RB
tr 20 ns
10 to 100 µs
VBB + 4.0 V
TO SCOPE
tr 20 ns
DUTY CYCLE 2.0%
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.3
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
tr
td
(PNP)
(NPN)
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
20
30
Figure 3. Turn–On Time
2 Motorola Bipolar Power Transistor Device Data


Part Number TIP36A
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker Motorola
PDF Download

TIP36A Datasheet PDF






Similar Datasheet

1 TIP36 Complementary Silicon Power Transistor
nELL
2 TIP36 PNP Transistor
INCHANGE
3 TIP36 PNP SILICON POWER TRANSISTORS
Power Innovations Limited
4 TIP36 Complementary Silicon Power Transistors
Central Semiconductor
5 TIP36 SILICON POWER TRANSISTOR
SavantIC
6 TIP36 Silicon Power Transistors
Comset Semiconductors
7 TIP36A Complementary Silicon Power Transistor
nELL
8 TIP36A COMPLEMENTARY SILICON POWER TRANSISTORS
Motorola
9 TIP36A Complementary Silicon High-Power Transistors
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy