* load; however, snubbing reduces switching losses. 5000 4500 4000 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 10 5 Ciss Crss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 0 VGS VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figur
TP33N10E Datasheet (195.47 KB)
TP33N10E
Motorola
195.47 KB
mtp33n10e.
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
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