• Part: TY30N50E
  • Description: Power Field Effect Transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 193.76 KB
Download TY30N50E Datasheet PDF
Motorola Semiconductor
TY30N50E
TY30N50E is Power Field Effect Transistor manufactured by Motorola Semiconductor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive .. loads are switched and offer additional safety margin against...