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Motorola Electronic Components Datasheet

XRF286 Datasheet

MRF286

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
from WISD RF Marketing
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and WLL applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9.5 dB
Intermodulation Distortion — –28 dBc
Typical Two–Tone Performance at 2000 MHz, 26 Volts
www.DataSheet4U.coOmutput Power — 60 Watts (PEP)
Power Gain — 10.5 dB
Efficiency — 32%
Intermodulation Distortion — –30 dBc
S–Parameter Characterization at High Bias Levels
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 60 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF286
MRF286S
Order sample parts by XRF286,S
PILOT PRODUCTION PROTOTYPE
2000 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF286)
CASE 465A–04, STYLE 1
(MRF286S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
± 20
240
1.37
– 65 to +150
200
Max
0.73
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
“PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume.
“X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice.
REV 3
©MMOotTorOolRa,OInLc.A20R00F DEVICE DATA
MRF286 MRF286S
1


Motorola Electronic Components Datasheet

XRF286 Datasheet

MRF286

No Preview Available !

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 20 µAdc)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
V(BR)DSS
IGSS
IDSS
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Gate Threshold Voltage
(VDS = 10 V, ID = 300 µA)
www.DataSheet4U.com
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
gfs
VGS(th)
VGS(Q)
VDS(on)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Input Capacitance(1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
Ciss
Coss
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
(1) Part is internally matched both on input and output.
Min Typ Max Unit
65 — — Vdc
——
1 µAdc
— — 10 µAdc
—3—S
2 3.2 4 Vdc
3 4.15 5 Vdc
— 0.16 0.6 Vdc
—3—
— 145 —
— 51 —
pF
pF
pF
9.5 10.5 —
dB
28 32 — %
— 30 –28 dBc
— –12 –9 dB
No Degradation In Output Power
MRF286 MRF286S
2
MOTOROLA RF DEVICE DATA


Part Number XRF286
Description MRF286
Maker Motorola
Total Page 8 Pages
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