1N823
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-pensated Zener Reference Diodes
Temperature-pensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature:
- 55 to +175°C Storage Temperature:
- 65 to +175°C DC Power Dissipation: 400 m W @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
TEMPERATUREPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 m W
CASE 299 DO-204AH GLASS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%- @ IZT = 7.5 m A) (Note...
