Motorola Electronic Components Datasheet

2N6344 Datasheet

TRIACS Silicon Bidirectional Triode Thyristors

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

• Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)

or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)

• For 400 Hz Operation, Consult Factory

• 12 Ampere Devices Available as 2N6342A thru 2N6349A

Order this document

by 2N6342/D

2N6342

thru

2N6349

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

MT1

MT2 G

CASE 221A-04

(TO-220AB)

STYLE 4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating

*Peak Repetitive Off-State Voltage(1)

(Gate Open, TJ = –40 to +110°C)

1/2 Sine Wave 50 to 60 Hz, Gate Open

2N6342, 2N6346

2N6343, 2N6347

2N6344, 2N6348

2N6345, 2N6349

Symbol

VDRM

Value

200

400

600

800

Unit

Volts

*RMS On-State Current

Full Cycle Sine Wave 50 to 60 Hz

(TC = +80°C)

(TC = +90°C)

IT(RMS)

Amps

*Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TC = +80°C)

Preceded and followed by Rated Current

Circuit Fusing

(t = 8.3 ms)

ITSM 100 Amps

I2t 40 A2s

*Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)

PGM

20 Watts

*Average Gate Power (TC = +80°C, t = 8.3 ms)

PG(AV)

0.5

Watt

*Peak Gate Current

IGM 2 Amps

*Peak Gate Voltage

VGM 10 Volts

*Operating Junction Temperature Range

TJ –40 to +125 °C

*Storage Temperature Range

Tstg –40 to +150

°C

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data

Motorola Electronic Components Datasheet

2N6344 Datasheet

TRIACS Silicon Bidirectional Triode Thyristors

No Preview Available !

2N6342 thru 2N6349

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction to Case

RθJC 2.2 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)

Characteristic

Symbol

Min Typ Max Unit

*Peak Blocking Current

(VD = Rated VDRM, gate open) TJ = 25°C

TJ = 100°C

*Peak On-State Voltage

p(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

(Minimum Gate Pulse Width = 2 µs)

MT2(+), G(+) All Types

MT2(+), G(–) 2N6346 thru 49

MT2(–), G(–) All Types

MT2(–), G(+) 2N6346 thru 49

*MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types

*MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

(Minimum Gate Pulse Width = 2 µs)

MT2(+), G(+) All Types

MT2(+), G(–) 2N6346 thru 49

MT2(–), G(–) All Types

MT2(–), G(+) 2N6346 thru 49

*MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types

*MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49

(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)

*MT2(+), G(+); MT2(–), G(–) All Types

*MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49

*Holding Current

(VD = 12 Vdc, Gate Open)

(IT = 200 mA)

TC = 25°C

*TC = –40°C

*Turn-On Time

(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,

Rise Time = 0.1 µs, Pulse Width = 2 µs)

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,

Gate Unenergized, TC = 80°C)

*Indicates JEDEC Registered Data.

IDRM

VTM

IGT

VGT

tgt

dv/dt(c)

— — 10 µA

——

2 mA

— 1.3 1.55 Volts

— 12 50

— 12 75

— 20 50

— 35 75

— — 100

— — 125

Volts

— 0.9

— 0.9 2.5

— 1.1

— 1.4 2.5

— — 2.5

——

0.2 —

—

— 6 40

— — 75

— 1.5 2 µs

— 5 — V/µs

FIGURE 1 – RMS CURRENT DERATING

100

α = 30°

60°

90°

92 120°

180°

88 α

α = CONDUCTION ANGLE

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

FIGURE 2 – ON-STATE POWER DISSIPATION

10 dc

8.0 α

6.0

α = CONDUCTION ANGLE 60°

[TJ 100°C

30°

4.0

α = 180°

120°

90°

2.0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

2 Motorola Thyristor Device Data

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2N6344 Datasheet

TRIACS Silicon Bidirectional Triode Thyristors

2N6344 Datasheet

TRIACS Silicon Bidirectional Triode Thyristors

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