M1MA152WKT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA151WKT1/D mon Cathode Silicon Dual Switching Diodes These mon Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC- 59 package which is designed for low power surface mount applications. - Fast trr, < 3.0 ns - Low CD, < 2.0 p F - Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel. CATHODE 3 M1MA151WKT1 M1MA152WKT1 Motorola Preferred Devices SC- 59 PACKAGE MON CATHODE DUAL SWITCHING DIODES 40/80 V- 100 m A SURFACE MOUNT 3 2 1 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA151WKT1 M1MA152WKT1 Peak Reverse Voltage M1MA151WKT1 M1MA152WKT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc CASE 318D- 03, STYLE 3 SC- 59 Vdc m Adc m Adc m Adc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 - 55 to + 150 Unit m W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151WKT1 M1MA152WKT1 Forward Voltage Reverse Breakdown Voltage M1MA151WKT1 M1MA152WKT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist pany Preferred devices are Motorola remended choices for future use and best overall value. Symbol IR VF VR CD trr(2) Condition VR = 35 V VR = 75 V IF = 100 m A IR = 100 µA VR = 0, f = 1.0 MHz IF = 10 m A, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min - - - 40 80 - - Max 0.1 0.1 1.2 - - 2.0 3.0 Unit µAdc Vdc Vdc p F ns REV 3 Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 M1MA151WKT1...