PBF259 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF259S MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc m Adc Watts m W/°C Watts m W/°C °C 1 2 3 CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 100 m Adc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO 300 300 5.0 - - - - - - 50 20 50 Vdc Vdc Vdc n Adc n Adc n Adc v 300 ms; Duty Cycle v 2.0%. Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 PBF259...