* Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
* Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97)
1165892
Multicomp
293.89 KB
High power npn silicon power transistors.
1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching a.
📁 Related Datasheet
1165899 High power NPN silicon transistors (Multicomp)
1165939 Transistors (Multicomp)
1168ER-0001 Fixed Inductors (TOKO)
1168ER-0002 Fixed Inductors (TOKO)
11-21UYC-S530-XX-TR8 11-21UYC/S530-XX/TR8 1206 Package Chip LEDs (Everlight)
11-MD123 Bi-directional Motor Driver (SiTi)
11-MD124 Bi-Directional Motor Driver (SiTi)
11-MPC-001-2-B Power Line Filters (api)
11-MPC-001-5-A Power Line Filters (api)
11-MPC-001-5-B Power Line Filters (api)
