2N5551 - Bipolar Transistor

Description

Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it.

Multicomp

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Datasheet Details

Part number	2N5551
Manufacturer	Multicomp
File Size	218.00 KB
Description	Bipolar Transistor
Datasheet	2N5551 Datasheet
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Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note-1) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC Note: 1. RthJA is measured with the device soldered into a typical printed circuit board. Rating 180 160 6 600 625 5 1.5 12 -55 to +150 83.3 200 www.element14.com www.farnell.com www.newark.com Page <1> Unit V A mW mW/°C W mW/°C °C °C/W 23/04/13 V1.

Published: May 16, 2017 |