BC107 - Low Power Bipolar Transistors

Multicomp

General Description

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO

Key Features

NPN Silicon Planar Epitaxial Transistors. Suitable for.

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BC107 low power bipolar transistors by Multicomp - Datasheet Preview

Datasheet Details

Part number	BC107
Manufacturer	Multicomp
File Size	162.22 KB
Description	Low Power Bipolar Transistors
Datasheet	BC107 Datasheet

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Other Datasheets by Multicomp

Part Number	Description
BC107A	Low Power Bipolar Transistors
BC107B	Low Power Bipolar Transistors
BC108	Low Power Bipolar Transistors
BC108B	Low Power Bipolar Transistors
BC108C	Low Power Bipolar Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Pin Configuration 1. Emitter. 2. Base. 3. Collector. Dimension A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Page 1 30/05/05 V1.