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BC108 - Low Power Bipolar Transistors

Download the BC108 datasheet PDF. This datasheet also covers the BC107 variant, as both devices belong to the same low power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO

Key Features

  • NPN Silicon Planar Epitaxial Transistors. Suitable for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC107-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC108
Manufacturer Multicomp
File Size 162.22 KB
Description Low Power Bipolar Transistors
Datasheet download datasheet BC108 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Pin Configuration 1. Emitter. 2. Base. 3. Collector. Dimension A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Page 1 30/05/05 V1.