Multicomp BD681
NPN Power Darlington Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation at Ta = 25°C Derate above 25°C Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient in Free Air Symbol VCBO VCEO VEBO IC IB PD Tj, Tstg BD681 100 5 4 0.1 1.25 10 40 0.32 -55 to +150 Unit V A W mW/°C W W/°C °C Rth (j-c) Rth (j-a) 3.13 100 °C/W Pin Configuration: 1. Emitter 2. Collector 3. Base Page <1> 20/12/12 V1.0 NPN Power Darlington TransistorELECTRICAL CHARACTERISTICS
(Ta = 25°C unless specified otherwise) Parameter Collector Emiiter Voltage Symbol VCEO* Collector Cut off Current ICEO ICBO ICBO Emitter Cut off Current Collector Emitter Saturation Voltage Ba