Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Peak Current (t = 10µs) Power Dissipation at Ta = 25°C
at TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient
Symbol VCBO VCES VCE
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BSX20
Low Power Bipolar Transistors
Feature:
• NPN Silicon Planar Switching Transistors.
Applications:
• High speed saturated switching applications.
TO-18 Metal Can Package
Dimensions
A B C D E F G H J K L
Minimum Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0.91 1.17
0.71 1.21
12.70
-
45° Dimensions : Millimetres
Pin Configuration: 1. Emitter 2. Base 3. Collector
Page 1
07/04/06 V1.
BSX20 Datasheet
