Datasheet4U Logo Datasheet4U.com

D44H10 - Bipolar Transistor

Datasheet Summary

Description

Plastic NPN TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/converters and ma

Features

  •   Very low collector saturation voltage.
  •   Excellent linearity.
  •   Fast switching NPN Emitter 3 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC IB PD Rating 80 80 5 10 2 50 0.4 Tj, Tstg -65 to +150 Unit V A A W W/°C °C 2 Collector 1 Base P.

📥 Download Datasheet

Datasheet preview – D44H10

Datasheet Details

Part number D44H10
Manufacturer Multicomp
File Size 203.49 KB
Description Bipolar Transistor
Datasheet download datasheet D44H10 Datasheet
Additional preview pages of the D44H10 datasheet.

📁 Similar Datasheet

  • D44H10 - SILICON POWER TRANSISTORS (RECTRON)
  • D44H10 - Complementary Silicon Power Transistors (ON Semiconductor)
  • D44H10 - 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola Inc)
  • D44H10 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • D44H10 - NPN POWER TRANSISTORS (GE)
  • D44H1 - Power Transistors (Mospec Semiconductor)
  • D44H1 - Complementary Silicon Power Transistors (Boca Semiconductor Corporation)
  • D44H1 - NPN POWER TRANSISTORS (GE)
  • D44H11 - SILICON POWER TRANSISTORS (RECTRON)
  • D44H11 - Complementary power transistors (STMicroelectronics)
Other Datasheets by Multicomp
  • D44H11 - High Power Bipolar Transistor

Full PDF Text Transcription

Click to expand full text
Bipolar Transistor Description: Plastic NPN TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/converters and many others. Features: •  Very low collector saturation voltage •  Excellent linearity •  Fast switching NPN Emitter 3 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC IB PD Rating 80 80 5 10 2 50 0.
Published: |