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Multicomp

D44H10 Datasheet Preview

D44H10 Datasheet

Bipolar Transistor

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Bipolar Transistor
Description:
Plastic NPN TO-220 silicon power transistor is designed for
various specific and general purpose applications such as
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1MHz series shunt and switching
regulators low and high frequency inverters/converters and
many others.
Features:
•  Very low collector saturation voltage
•  Excellent linearity
•  Fast switching
NPN
Emitter
3
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Total Device Dissipation at Tc = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Symbol
VCEO
VCES
VEBO
IC
IB
PD
Rating
80
80
5
10
2
50
0.4
Tj, Tstg -65 to +150
Unit
V
A
A
W
W/°C
°C
2
Collector
1
Base
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector - Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics
V(BR)CEO
ICES
IEBO
IC=30mA, IB=0
VCE=80V, VBE=0
VEB=5V, IC=0
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE=1V, IC=2A
VCE=1V, IC=4A
IC=8A, IB=800mA
IC=8A, IB=800mA
Min. Max. Unit
80 -
V
- 10
μA
- 100
35 -
20 -
-1
1.5
-
-
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0




Multicomp

D44H10 Datasheet Preview

D44H10 Datasheet

Bipolar Transistor

No Preview Available !

Bipolar Transistor
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Small-Signal Characteristics
Current Gain-Bandwidth Product
Output Capacitance
Switching Characteristics
Rise Time
Storage Time
Fall Time
Symbol
Test Conditions
fT
Cobo
tr
ts
tf
VCE=10V, IC=500mA,
f=0.5MHz
VCB=10V, IE=0, f=1MHz
IC=5A, IB1=IB2=500mA
Min. Max. Unit
15 - MHz
220 -
pF
- 0.5
- 1 μA
- 0.4
Pin Configuration:
1. Base
2. Collector
3. Emitter
Dimensions A B C D E F G H J K L M N O
Min.
Max.
14.42 9.63 3.65 - 1.15 3.75 2.29 2.54 - 12.7 2.8 2.03 -
16.51 10.67 4.83 0.9 1.4 3.88 2.79 3.43 0.56 14.73 4.07 2.92 31.24
Dimensions : Millimetres
Part Number Table
Description
Transistor, NPN, 10A, 80V, TO-220
Part Number
D44H10
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
www.element14.com
www.farnell.com
www.newark.com
Page <2>
23/04/13 V1.0


Part Number D44H10
Description Bipolar Transistor
Maker Multicomp
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D44H10 Datasheet PDF






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