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TIP131 - Darlington Transistors

Key Features

  • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137.
  • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A.
  • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J.

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Datasheet Details

Part number TIP131
Manufacturer Multicomp
File Size 408.41 KB
Description Darlington Transistors
Datasheet download datasheet TIP131 Datasheet

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Other Datasheets by Multicomp

Part Number Description
TIP132 Darlington Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN TIP131 TIP132 PNP TIP136 TIP137 8.0 Ampere Darlington Complementary Silicon Power Transistors 80 - 100 Volts 70 Watts TO-220 Page 1 31/05/05 V1.