Datasheet4U Logo Datasheet4U.com

TIP132 - Darlington Transistors

Download the TIP132 datasheet PDF. This datasheet also covers the TIP131 variant, as both devices belong to the same darlington transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137.
  • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A.
  • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP131-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP132
Manufacturer Multicomp
File Size 408.41 KB
Description Darlington Transistors
Datasheet download datasheet TIP132 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP132 Silicon NPN Darlington Power Transistors SavantIC
TIP132 Power Transistors RECTRON
TIP132 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics
TIP132 NPN SILICON POWER DARLINGTONS Power Innovations Limited
TIP132 NPN Transistor INCHANGE

Other Datasheets by Multicomp

Part Number Description
TIP131 Darlington Transistors
TIP136 Darlington Transistors
TIP137 Darlington Transistors
TIP137 Transistors
TIP102 Power Darlington Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN TIP131 TIP132 PNP TIP136 TIP137 8.0 Ampere Darlington Complementary Silicon Power Transistors 80 - 100 Volts 70 Watts TO-220 Page 1 31/05/05 V1.