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TIP29A - High Power Bipolar Transistors

Key Features

  • Collector-Emitter sustaining voltage- VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A = 100 V (Minimum) - TIP29C, TIP30C.
  • Collector-Emitter saturation voltage- VCE (sat) = 0.7 V (Maximum) at IC = 1 A.
  • Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Dimensions A B C D E F G H I J K L M O Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage.

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Datasheet Details

Part number TIP29A
Manufacturer Multicomp
File Size 393.07 KB
Description High Power Bipolar Transistors
Datasheet download datasheet TIP29A Datasheet

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High Power Bipolar Transistors Tip Series Features: • Collector-Emitter sustaining voltage- VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A = 100 V (Minimum) - TIP29C, TIP30C • Collector-Emitter saturation voltage- VCE (sat) = 0.7 V (Maximum) at IC = 1 A • Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Dimensions A B C D E F G H I J K L M O Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous - Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Minimum Maximum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.2 0.33 2.48 3.7 15.31 10.42 6.52 14.62 4.