Multicomp TIP29A
High Power Bipolar Transistors
FEATURES
:● Collector-Emitter sustaining voltage- VCEO (sus) = 60 V (Minimum) - TIP29A, TIP30A = 100 V (Minimum) - TIP29C, TIP30C
● Collector-Emitter saturation voltage- VCE (sat) = 0.7 V (Maximum) at IC = 1 A
● Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Dimensions A B C D E F G H I J K L M O
MAXIMUM RATINGS
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous - Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Minimum Maximum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.2 0.33 2.48 3.7 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.9 Dimensions : Millimetres NPN PNP TIP29A TIP30A TIP29C TIP30C 1A Complementary Silicon Power Transistors 40 - 100 V 30 W TO-220 Symbol VCEO VCBO VE