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PNP Power Transistor
Complementary Silicon Plastic Power Transistors Features:
Designed for use in general purpose power amplifier and switching applications. • Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum). • Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A. • Current gain-bandwidth product fT = 3.0 MHz (minimum) at IC = 500mA.
Pin 1. Base. 2. Collector. 3. Emitter. 4. Collector (Case).
Maximum Ratings
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.
TIP42C Datasheet
