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1N3293 - (1N3288 - 1N3297) SILICON POWER DIODE

Download the 1N3293 datasheet PDF. This datasheet also covers the 1N3288 variant, as both devices belong to the same (1n3288 - 1n3297) silicon power diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • Diffused Series.
  • Available in Normal & Reverse Polarity.
  • Industrial Grade.
  • Available In Avalanche Characteristic.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3288_NAINASEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3293
Manufacturer NAINA SEMICONDUCTOR
File Size 109.67 KB
Description (1N3288 - 1N3297) SILICON POWER DIODE
Datasheet download datasheet 1N3293 Datasheet

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Other Datasheets by NAINA SEMICONDUCTOR

Part Number Description
1N3290 (1N3288 - 1N3297) SILICON POWER DIODE
1N3291 (1N3288 - 1N3297) SILICON POWER DIODE
1N3292 (1N3288 - 1N3297) SILICON POWER DIODE
1N3294 (1N3288 - 1N3297) SILICON POWER DIODE
1N3295 (1N3288 - 1N3297) SILICON POWER DIODE

Full PDF Text Transcription

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1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.DataSheet4U.com Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.400C/W -650C to 1500C -65 0C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms.
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